image of Goodram IRDM Ultimate X M.2 SSD

Goodram IRDM Ultimate X

SSD Specification and Info

Goodram IRDM Ultimate X is an Mid-Range NVMe SSD produced and sold by Goodram. The device comes with x4 PCIe 4.0/NVMe interface and M.2 form factor - a good fit for both desktop and laptop computers. This SSD has a maximum sequential read-write speed of up to 5000/4500 MB per second, making it ideal for gaming and workstation PCs.

Goodram IRDM Ultimate X is equiped with DRAM memory, and a TLC NAND flash memory with 96 cell layers.


Specification

Model
Interfacex4 PCIe 4.0/NVMe
Form factorM.2
Capacity500GB-2TB
ControllerPhison E16
ConfigurationDual R5 + CoX, 8-ch, 4-CE/ch
DRAMYes
HMBNo
NAND brandKioxia
NAND typeTLC
Layer96
R/W speed5000/4500 MB/s
TierMid-Range NVMe
ManualGoodram IRDM Ultimate X

NAND type

Goodram IRDM Ultimate X is using a TLC (3 bits per cell) NAND manufacurted by Kioxia with 96 cell layers on top of each other.

The TLC is the most common type of SSD NAND flash memory found on the market at the moment. It is faster, less durable, but still cheaper than the other, more expensive variants - SLC and MLC.

The main advantage of this type of NAND chips is the fact that the cost per gigabyte is much lower, allowing high capacity SSDs at affordable price.

The Controller

Goodram IRDM Ultimate X is using Phison E16 SSD controller to connect the NAND memory to the x4 PCIe 4.0/NVMe interface. The controller has Dual R5 + CoX, 8-ch, 4-CE/ch configuration.

Typically, SSD controllers are microprocessors. In this case we have Dual R5 + CoX, 8-ch, 4-CE/ch processor responsible for controlling the SSD in such way, so that the data coming from the interface can be stored on to the NAND flash memory.

Some SSDs have simpler controllers with fewer communication channels and less cores.

Among other things, the controller also manages the SLC caching, optimizing the DRAM cache, encryption, LDPC, garbage collection, wear-leveling as well as TRIM

DRAM Cache

Goodram IRDM Ultimate X has a separate DRAM chip to store the SD mapping tables. DRAM cache speeds up the data access significantly compared to the DRAM-less models.

As soon as the OS requests some data from the SSD, the SSD needs to know exactly where it is on the drive. Because garbage collection moves the data constantly, the controller relies on the mapping tables to locate it.

These tables are stored in DRAM cache, where they are accessed much more quickly than in NAND flash.

Therefore, SSDs with DRAM-less architecture have more random write and read operations. This makes the device perform worse and last shorter if they are not HMB enabled.

HMB Support

There is no HMB architecture available on the Goodram IRDM Ultimate X to store the mapping tables. The device either doesn't support the architecture or uses DRAM cache.

The HBM is used to reduce the cost of production of NVMe SSDs with DRAM Cache, SSDs with this type of controllers can leverages the host system's DRAM instead of an onboard DRAM chip to host the FTL mapping table used by flash storage.